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High Purity 99.999% Electronic Grade For Semiconductor Use C4F6 Gas Octafluorocyclobutane Gas
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Dry Etching Oxide Based Materials Compressed Liquefied Gases Perfluoro 2 butyne H 2316 Perfluoro2butyne C4F6
Hexafluoro1,3‐butadiene is a toxic, colorless, odorless, flammable liquefied compressed gas
Years of research have shown that C4F6 (H-2316) presents several advantages for dry etching of oxide-based materials:
It has a higher etch rate and selectivity than octafluorocyclobutane (c-C4F8 – H318), another extensively used etchant for silicon oxide. Unlike C4F8 (H318), with C4F6 (H2316), only the dielectric substrate is etched. The etched structure has a higher aspect ratio, leading to narrower trenches compared to c-C4F8.VOC emissions are reduced: C4F6 (H2316) has low global warming potential because it has a much shorter lifetime in the atmosphere.
Application:
The next generation of core materials required in LSI production processes to minimize circuit line width and depth. The dry etching gas is used in an etching process of micro contact holes. For special gases based on the CxFy chemical formula, the smaller the F/C value, the more CF2 groups are produced. Compared to C2F6 C3F8, C4F6 has a smaller F/C ratio and produces more CF2 groups, which in turn, etches more oxide film. Therefore, C4F6 has a higher selectivity to the oxide film and allows for a more uniform etching.
